Integrated Quantum Photonics with III-V Materials
Galan Moody Associate Professor - Electrical and Computer EngineeringUniversiIty of California, Santa Barbara Abstract: Integrated photonics is revolutionizing how we generate, manipulate, and transmit quantum information. While the scalability and manufacturability of silicon-based photonics has been a driver of many quantum photonic technologies over the past two decades, future progress will require hybrid and heterogeneous integration strategies that can take advantage of different materials. In this presentation, I’ll focus on AlGaAs and InGaP, III-V semiconductor platforms that combine mature fabrication technology, a direct bandgap for electrical injection, low-loss operation, and large optical nonlinearities for efficient quantum light generation and conversion. After a brief background and introduction to progress in the field, I’ll discuss how III-V devices are made at wafer-scale, which we have utilized for high-rate entangled-photon pair generation and on-chip squeezing with performance that rivals bulk optics at a fraction of the size and power. I’ll highlight some emerging applications, including: (1) multi-node entanglement distribution over deployed fiber for networking, cryptography, and quantum time transfer, (2) development and integration of tunable chip-scale lasers for turnkey and compact quantum modules, and (3) methods for massive multiplexing using arrays of quantum frequency combs for reconfigurable quantum states. I’ll conclude with future challenges and exciting prospects in the next 5-10 years.